GAAFET

Every decade is the decade that tests the limits of Moore’s Law, and this decade is no different. With the arrival of Extreme Ultra Violet (EUV) technology, the intricacies of multipatterning techniques developed on previous technology nodes can now be applied with the finer resolution that EUV provides. That, along with other more technical improvements, can lead to a decrease in transistor size, enabling the future of semiconductors. To that end, Today IBM is announcing it has created the world’s first 2 nanometer node chip.

TSMC to Spend $100B on Fabs and R&D Over Next Three Years: 2nm, Arizona Fab & More

TSMC this week has announced plans to spend $100 billion on new production facilities as well as R&D over the next three years. The world's largest contract maker of...

45 by Anton Shilov on 4/2/2021

Intel to use Nanowire/Nanoribbon Transistors in Volume ‘in Five Years’

This year, at the international VLSI conference, Intel’s CTO Mike Mayberry gave one of the plenary presentations, which this year was titled ‘The Future of Compute’. Within the presentation...

14 by Dr. Ian Cutress on 6/22/2020

Samsung Announces 3nm GAA MBCFET PDK, Version 0.1

So what comes after 7nm, after 6nm, after 5nm, and after 4nm? That's right: 3nm! At Samsung's Foundry Forum event today, Samsung has announced that the first alpha version...

32 by Dr. Ian Cutress on 5/14/2019

Samsung Foundry Roadmap: EUV-Based 7LPP for 2018, 3 nm Incoming

Samsung Foundry this week updated its fabrication technology roadmap, introducing a number of changes and announcing the first details about its 3 nm manufacturing process that is several years...

25 by Anton Shilov on 5/24/2018

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